EQUILIBRIUM AND NONEQUILIBRIUM RESPONSE OF AN MOS SYSTEM CONTAINING INTERFACE TRAPS TO A LINEAR VOLTAGE RAMP

被引:5
作者
BOARD, K
ALLMAN, PGC
SIMMONS, JG
机构
来源
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES | 1979年 / 3卷 / 01期
关键词
D O I
10.1049/ij-ssed.1979.0003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of introducing specific interface trap configurations into the ideal m. o. s. system are considered while maintaining the condition for equilibrium. The theory is then used to fit an experimental curve and it is found that only three rectangular distributions placed appropriately in the energy gap are sufficient to give close agreement. In the second part the capacitance/voltage relationships are considered of an m. o. s. system biased with a linear voltage ramp of such rate as to generate the quasiequilibrium curve for part of the voltage range, and a nonequilibrium portion for the remainder. A theory is developed for the transition point and the subsequent nonequilibrium behavior, based on the assumption that interface traps that interact only with the conduction band are the dominating influence. Experimental data are presented which provide reasonable agreement with the theory.
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页码:11 / 16
页数:6
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