SUBSTRATE CONDUCTION IN GAAS-MESFETS

被引：2

作者：

BORDEN, PG

机构：

[1] Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 11期

关键词：

Field-effect transistors; Gallium arsenide;

D O I：

10.1049/el:19790217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Substrate currents in a gateless GaAs m.e.s.f.e.t. have been measured at d.c, 0·9 MHz and 2 GHz. The results are consistent with the assumption of substrate conduction at high frequencies and active-layer conduction alone at low frequencies. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：307 / 308

页数：2