ELECTRON-PARAMAGNETIC-RESONANCE STUDIES ON ARSENIC ACCEPTORS IN NATURAL (2H) AND SYNTHETIC (3R) MOS2 CRYSTALS

被引：24

作者：

TITLE, RS ^{[1
]}

SHAFER, MW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.8.615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：615 / 620

页数：6

共 26 条

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