CLUSTER CALCULATION OF THE BORON CENTER IN SIC

被引：9

作者：

PETRENKO, TL ^{[1
]}

BUGAI, AA ^{[1
]}

BARYAKHTAR, VG ^{[1
]}

TESLENKO, VV ^{[1
]}

KHAVRYUTCHENKO, VD ^{[1
]}

机构：

[1] NATL ACAD SCI,INST SURFACE CHEM,KIEV 252028,UKRAINE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 10期

关键词：

D O I：

10.1088/0268-1242/9/10/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Calculations using the self-consistent unrestricted Hartree-Fock-Roothan method are carried out in the MNDO approximation for a cluster of 35 host atoms of cubic SiC with a boron impurity. The equilibrium geometry and the hyperfine and quadrupole constants are obtained and compared with experimental values. The computed parameters reveal the main features of boron impurities in SiC.

引用

页码：1849 / 1852

页数：4

共 13 条

[1]

BARAN NP, 1993, FIZ TVERD TELA+, V35, P3135

[2]

BLOWER KL, 1974, PHYS REV B, V9, P2607

[3] GROUND-STATES OF MOLECULES .38. MNDO METHOD - APPROXIMATIONS AND PARAMETERS [J].