GETTERING OF NICKEL TO CAVITIES IN SILICON INTRODUCED BY HYDROGEN IMPLANTATION

Almost complete gettering of Ni in (100) Si was obtained by initially implanting H to a depth of ∼0.9 μm, followed by Ni implantation close to the surface, and subsequent thermal annealing. H-induced cavities, as evidenced by transmission electron microscopy, act as efficient gettering sites for Ni. By performing Ni implantations at various doses and at elevated sample temperature, it was shown that formation of amorphous silicon caused by Ni implantation significantly reduces the gettering efficiency. The results will be discussed taking diffusion and solubility of Ni in Si into account, as well as formation of NiSi2 precipitates.© 1995 American Institute of Physics.