DIFFICULTIES IN DEDUCING DISORDERING MECHANISMS FROM EXPERIMENTAL STUDIES OF DISORDER-ION FLUENCE FUNCTIONS IN ION IRRADIATION OF SEMICONDUCTORS

被引：40

作者：

WEBB, R

CARTER, G

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 42卷 / 3-4期

关键词：

D O I：

10.1080/00337577908209133

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：159 / 168

页数：10

共 12 条

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[2]

CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164

[3] ACCUMULATION OF DISORDER, SUBJECT TO SATURATION AND SPUTTER LIMITATION, IN ION IRRADIATED SOLIDS [J].

CARTER, G ;

WEBB, R ;

COLLINS, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2) :21-32

[4]

CARTER GA, UNPUBLISHED

[5]

DENNIS JR, 1978, J APPL PHYS, V49, P119

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[7]

HIRVONEN JK, 1971, 2ND P INT C ION IMPL

[8]

MOREHEAD FF, 1970, RADIAT EFF, V6, P25

[9] CRITERIA FOR BOMBARDMENT-INDUCED STRUCTURAL-CHANGES IN NON-METALLIC SOLIDS [J].

NAGUIB, HM ;

KELLY, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01) :1-12

[10]

SWANSON ML, RAD EFFECTS SEMICOND, P349

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