ANNEALING EFFECTS ON THERMOELECTRIC POWER AND A MODEL FOR LOW-FIELD CONDUCTION IN AMORPHOUS GERMANIUM

被引：32

作者：

VESCAN, L ^{[1
]}

TELNIC, M ^{[1
]}

POPESCU, C ^{[1
]}

机构：

[1] INST PHYS,BUCHAREST,ROMANIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1972年 / 54卷 / 02期

关键词：

D O I：

10.1002/pssb.2220540238

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：733 / 744

页数：12

共 15 条

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[8] HOLE INJECTION IN JUNCTIONS BETWEEN AMORPHOUS GE LAYERS AND N-TYPE GE SINGLE CRYSTALS [J].

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[9]

GRIGOROVICI R, 1971, THIN SOLID FILMS, V9, P1

[10]

HERSCOVICI C, TO BE PUBLISHED

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