DETERMINATION OF CARRIER DENSITIES IN LIGHTLY DOPED SILICON-CRYSTALS FROM THE HALL-EFFECT

被引：9

作者：

HACKMANN, A ^{[1
]}

NEUBERT, D ^{[1
]}

SCHERZ, U ^{[1
]}

SCHLIEF, R ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST THEORET PHYS,D-1000 BERLIN 12,FED REP GER

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.24.4666

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4666 / 4683

页数：18

共 47 条

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