THERMAL-STABILITY OF WSIX/GAAS INTERFACE

被引：28

作者：

TAKATANI, S ^{[1
]}

MATSUOKA, N ^{[1
]}

SHIGETA, J ^{[1
]}

HASHIMOTO, N ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：220 / 224

页数：5

共 16 条

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].

ANDERSON, WT ;

CHRISTOU, A ;

DAVEY, JE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435

[2] REFRACTORY-METAL SILICIDES FOR SELF-ALIGNED GATE MODULATION DOPED N+-(AL,GA)AS/GAAS FIELD-EFFECT TRANSISTOR INTEGRATED-CIRCUITS [J].

CIRILLO, NC ;

CHUNG, HK ;

VOLD, PJ ;

HIBBSBRENNER, MK ;

FRAASCH, AM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1680-1684

[3] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[4] PD-GE CONTACTS TO N-TYPE GAAS [J].

GRINOLDS, HR ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :973-&

[5] DETERMINATION OF FILM STRESSES DURING SPUTTER DEPOSITION USING AN INSITU PROBE [J].

HOFFMAN, DW ;

KUKLA, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2600-2604

[6] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS [J].

JACKSON, TN ;

DEGELORMO, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1676-1679

[7]

KANAMORI M, 1985, IEEE S GAAS, P49

[8] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

KATAYAMA, Y ;

MORIOKA, M ;

SAWADA, Y ;

UEYANAGI, K ;

MISHIMA, T ;

ONO, Y ;

USAGAWA, T ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L150-L152

[9]

KOTERA N, 1985, IEEE GAAS IC S, P41

[10] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS [J].

LAU, SS ;

CHEN, WX ;

MARSHALL, ED ;

PAI, CS ;

TSENG, WF ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1298-1300

← 1 2 →