PULSED LASER-INDUCED CHARGE COLLECTION IN GAAS-MESFETS

被引：17

作者：

KNUDSON, AR

CAMPBELL, AB

MCMORROW, D

BUCHNER, S

KANG, K

WEATHERFORD, T

SRINIVAS, V

SWARTZLANDER, GA

CHEN, YJ

机构：

[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227

[2] UNIV MARYLAND,BALTIMORE,MD 21201

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed picosecond lasers with variable wavelength have been used to investigate the details of charge collection in GaAs MESFETs. In short gate-length devices, charge collection at the drain may be much larger than at the gate and greater than the charge produced by the laser pulses. © 1990 IEEE

引用

收藏

页码：1909 / 1915

页数：7

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