EFFECTS OF NONLINEAR GAIN ON 4-WAVE-MIXING AND ASYMMETRIC GAIN SATURATION IN A SEMICONDUCTOR-LASER AMPLIFIER

被引：80

作者：

TIEMEIJER, LF

机构：

[1] Philips Optoelectronics Centre, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nearly degenerate four-wave mixing (NDFWM) and asymmetric gain saturation were studied in a 1.5-mu-m InGaAsP semiconductor laser amplifier at highly saturated conditions (P(out) >> P(sat)) and frequency separations up to 500 GHz. Apart from modulation of the carrier density the data reveal a new mechanism of NDFWM with a characteristic time of about 650 fs which takes over when the frequency separation exceeds 100 GHz.

引用

页码：499 / 501

页数：3

共 17 条

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