THE LIKELIHOOD OF III2-VI3-COMPOUND FORMATION DURING EPITAXIAL-GROWTH OF II-VI ON III-V-SEMICONDUCTORS

被引:23
作者
KOLODZIEJCZYK, M
FILZ, T
KROST, A
RICHTER, W
ZAHN, DRT
机构
[1] Sekr. PN-6-1, Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36
关键词
D O I
10.1016/0022-0248(92)90811-V
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In order to explore the formation of III(x)-VI(y) compounds during the growth of II-VI/III-V heterostructures, III-V substrates were annealed in chalcogenide-rich atmospheres. Substrate temperatures were varied from 250 to 450-degrees-C at exposure times from 1/2 to 8 h. After this treatment the samples were analysed using X-ray diffraction and Raman spectroscopy. The resulting X-ray and Raman spectra significantly differ from those of the bare substrates. In the majority of cases both methods clearly demonstrate that III2-VI3 compounds have formed.
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页码:549 / 553
页数:5
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