THE LIKELIHOOD OF III2-VI3-COMPOUND FORMATION DURING EPITAXIAL-GROWTH OF II-VI ON III-V-SEMICONDUCTORS

In order to explore the formation of III(x)-VI(y) compounds during the growth of II-VI/III-V heterostructures, III-V substrates were annealed in chalcogenide-rich atmospheres. Substrate temperatures were varied from 250 to 450-degrees-C at exposure times from 1/2 to 8 h. After this treatment the samples were analysed using X-ray diffraction and Raman spectroscopy. The resulting X-ray and Raman spectra significantly differ from those of the bare substrates. In the majority of cases both methods clearly demonstrate that III2-VI3 compounds have formed.