DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION

被引：35

作者：

KUZNETSOV, NI ^{[1
]}

ZUBRILOV, AS ^{[1
]}

机构：

[1] CREE RES EED,ST PETERSBURG 194021,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SILICON CARBIDE; DEFECT FORMATION; LIGHT EMITTING DIODES; ALUMINUM;

D O I：

10.1016/0921-5107(94)04035-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed electrical and optical measurements to characterize the processes of radiative recombination of carriers for 4H-SiC p-n(+) junctions. We have detected three levels in the band gap, using capacitance and current deep-level transient spectroscopy, which are responsible for the bands observed in the electroluminescence spectra. We assume that the HK1 center with an activation energy of E(V) + 0.229 eV and a hole capture cross-section of 8 x 10(-13) (300/T)(3) is related to the Al acceptor level.

引用

页码：181 / 184

页数：4

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