MAGNETIC PROPERTIES OF INAS DIODE ELECTROLUMINESCENCE

[1] AUSTIN IG, 1960, J ELECTRON CONTR, V8, P167

[2] BENOIT CAL, 1962, 1962 P INT C PHYS SE, P875

[3] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS [J]. NATURE, 1963, 198 (487) : 368 - &

[4] INJECTION ELECTROLUMINESCENCE IN GALLIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1660 - &

[5] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING [J]. PHYSICAL REVIEW, 1961, 121 (03): : 752 - &

[6] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J]. PHYSICAL REVIEW, 1961, 123 (05): : 1560 - &

[7] FOWLER AB, 1964, J APPL PHYS, V35, P7271

[8] FOWLER AB, 1963, B AM PHYS SOC, V8, P202

[9] GALEENER FL, 1963, PHYS REV LETT, V10, P472

[10] GALEENER FL, 1961, THESIS MIT

[1] AUSTIN IG, 1960, J ELECTRON CONTR, V8, P167

[2] BENOIT CAL, 1962, 1962 P INT C PHYS SE, P875

[3] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS [J]. NATURE, 1963, 198 (487) : 368 - &

[4] INJECTION ELECTROLUMINESCENCE IN GALLIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1660 - &

[5] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING [J]. PHYSICAL REVIEW, 1961, 121 (03): : 752 - &

[6] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J]. PHYSICAL REVIEW, 1961, 123 (05): : 1560 - &

[7] FOWLER AB, 1964, J APPL PHYS, V35, P7271

[8] FOWLER AB, 1963, B AM PHYS SOC, V8, P202

[9] GALEENER FL, 1963, PHYS REV LETT, V10, P472

[10] GALEENER FL, 1961, THESIS MIT