COMPARISON OF THE CONVENTIONAL AND EXTENDED WKB APPROXIMATIONS FOR TUNNELING IN SEMICONDUCTORS

被引：5

作者：

CHAKRABORTY, PK

BISWAS, JC

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1101(89)90141-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 636

页数：4

共 12 条

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[10]

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