LOW ENERGY RADIATION DETECTION WITH SILICON SEMICONDUCTOR DETECTORS USING A NEW TYPE PREAMPLIFIER

被引：8

作者：

DESI, S

机构：

[1] Department of Physics, Purdue University, Lafayette, IN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1969年 / 70卷 / 01期

关键词：

D O I：

10.1016/0029-554X(69)90180-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A low noise preamplifier utilizing a temperature controlled FET input stage is described. In conjunction with a lithium drifted silicon detector, the amplification system makes possible measurements of low energy nuclear radiation with high resolution. Experimental data are presented which show that a resolution of 335 eV (fwhm) can be obtained for X-rays of about 6 keV. The Fano-factor (statistical smoothing" factor) for silicon has been determined as F=0.29±0.04. © 1969."

引用

页码：57 / &