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A DTA STUDY OF SEMICONDUCTOR-METALLIC TRANSITION TEMPERATURE IN V1-XWX02, O[=X[=O.067

被引：40
作者：
NYGREN, M
ISRAELSSON, M
机构：
[1] Institute of Inorganic and Physical Chemistry University of Stockholm Box 6801
来源：
MATERIALS RESEARCH BULLETIN | 1969年 / 4卷 / 12期
关键词：
D O I：
10.1016/0025-5408(69)90044-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A simple low-temperature D.T.A. set-up, designed for measurements in the temperature region 120°K - 600°K, is described. The system V1-xWxO2, 0 ≤ x ≤ 0.067, has been studied by means of D.T.A. and X-ray powder diffraction methods. A linear decrease of the transition temperature with increasing x has been observed. © 1969.
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页码：881 / +
页数：1
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