LINEWIDTH ENHANCEMENT IN DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASERS

被引：30

作者：

AMANN, MC

机构：

[1] Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, D-8000

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 09期

关键词：

Lasers and laser applications; Optical communications;

D O I：

10.1049/el:19900372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that the linewidth enhancement in distributed-feedback (DFB) laser diodes can differ significantly from (1 + α2), where a is Henry's linewidth enhancement factor. The influence of the relevant laser parameters, the detuning of the gain peak wavelength, a π/2 phase shift and a reflecting end facet on the linewidth enhancement is discussed with respect to an improved DFB laser design. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：569 / 571

页数：3

共 7 条

[1] LINEWIDTH ENHANCEMENT, FREQUENCY-MODULATION AND INSTABILITIES OF GAIN-GUIDED SEMICONDUCTOR-LASERS
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[J]. ELECTRONICS LETTERS, 1987, 23 (08) : 393 - 394
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[J]. ELECTRONICS LETTERS, 1987, 23 (14) : 715 - 717

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