OPTICAL INVESTIGATIONS OF THE BAND OFFSETS IN AN INGAAS-INGAASP-INP DOUBLE-STEP HETEROSTRUCTURE

被引:17
作者
SOUCAIL, B
VOISIN, P
VOOS, M
RONDI, D
NAGLE, J
DECREMOUX, B
机构
[1] Lab. de Phys. de la Matiere Condensee, Ecole Normale Superieure, Paris
关键词
D O I
10.1088/0268-1242/5/8/021
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report optical investigations of an InGaAs-InGaAsP-InP double-step quantum well designed to provide a sensitive measurement of the band offsets in this technologically important system. The results yield a conduction band offset to bound-gap difference ratio of 43+or-2% which coincides with recent estimates for the InGaAs-InP heterojunction.
引用
收藏
页码:918 / 920
页数:3
相关论文
共 15 条
  • [1] Nagle J, Weisbuch C, (1987)
  • [2] Guldner Y, Vieren JP, Voisin P, Voos M, Razhegi M, Poisson MA, Appl. Phys. Lett., 40, 10, (1982)
  • [3] Forrest SR, Kim OK, J. Appl. Phys., 53, 8, (1982)
  • [4] Leu LY, Forrest SR, J. Appl. Phys., 64, 10, (1988)
  • [5] Lang D, Panish MB, Capasso F, Allam J, Hamm RA, Sergent AM, Tsang WT, Appl. Phys. Lett., 50, 12, (1987)
  • [6] Tsang WT, Schubert EF, Appl. Phys. Lett., 49, 4, (1986)
  • [7] Skolnick MS, Taylor LL, Bass SJ, Pitt AD, Mowbray DJ, Gullis AG, Chew NG, Appl. Phys. Lett., 51, 1, (1987)
  • [8] Haase MA, Pan N, Stillman GE, Appl. Phys. Lett., 54, 15, (1989)
  • [9] Meynadier MH, Delalande C, Bastard G, Voos M, Alexandre F, Lievin JL, Phys. Rev., 31, 8, (1985)
  • [10] Miller RC, Gossard AC, Wiegmann W, Phys. Rev., 32, 8, (1985)