OPTICAL INVESTIGATIONS OF THE BAND OFFSETS IN AN INGAAS-INGAASP-INP DOUBLE-STEP HETEROSTRUCTURE

被引：17

作者：

SOUCAIL, B

VOISIN, P

VOOS, M

RONDI, D

NAGLE, J

DECREMOUX, B

机构：

[1] Lab. de Phys. de la Matiere Condensee, Ecole Normale Superieure, Paris

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 08期

关键词：

D O I：

10.1088/0268-1242/5/8/021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report optical investigations of an InGaAs-InGaAsP-InP double-step quantum well designed to provide a sensitive measurement of the band offsets in this technologically important system. The results yield a conduction band offset to bound-gap difference ratio of 43+or-2% which coincides with recent estimates for the InGaAs-InP heterojunction.

引用

页码：918 / 920

页数：3

共 15 条

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