共 20 条
[1]
Anistropy of the constant-energy surfaces in n-type Bi2Te3 and Bi2Se3 from galvanomagnetic coefficients
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 2 (08)
:3209-3220
[2]
ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B,
1956, 69 (11)
:1101-1108
[3]
GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON,
1958, 72 (465)
:380-390
[4]
EFFECTIVE MASS DEPENDENCE ON CARRIER CONCENTRATION IN BI2SE3
[J].
ZEITSCHRIFT FUR PHYSIK,
1969, 222 (01)
:93-&
[7]
CONDUCTIVITY TENSOR COMPONENTS OF N-BI2SE3
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1974, 62 (01)
:57-63
[8]
INVESTIGATION OF CONDUCTION-BAND FERMI-SURFACE IN BI2SE3 AT HIGH ELECTRON CONCENTRATIONS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1975, 69 (02)
:349-357
[9]
GALVANOMAGNETIC PROPERTIES OF BI2SE3 WITH FREE CARRIER DENSITIES BELOW 5X1017 CM-3
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1975, 71 (02)
:487-496
[10]
CONDUCTION-BAND PARAMETERS OF BI2SE3 FROM SHUBNIKOV-DE HAAS INVESTIGATIONS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1973, 58 (01)
:91-100