HIGH-PRECISION STUDY OF EXCITED-STATE TRANSITIONS OF SHALLOW DONORS IN SEMICONDUCTORS

被引：11

作者：

SKOLNICK, MS ^{[1
]}

CARTER, AC ^{[1
]}

COUDER, Y ^{[1
]}

STRADLING, RA ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD,ENGLAND

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA | 1977年 / 67卷 / 07期

关键词：

D O I：

10.1364/JOSA.67.000947

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：947 / 951

页数：5

共 16 条

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SIMMONDS, PE .

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[3]

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[5] POLARON BOUND IN A COULOMB POTENTIAL [J].

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TZOAR, N .

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[6]

GERSHENZON EM, 1974, SOV PHYS SEMICOND+, V7, P1248

[7]

GERSHENZON EM, 1972, SOV PHYS SEMICOND+, V6, P509

[8] SHALLOW DONOR LEVELS OF INSB IN A MAGNETIC FIELD [J].

LARSEN, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (02) :271-&

[9] INHOMOGENEOUS LINE BROADENING IN DONOR MAGNETO-OPTICAL SPECTRA [J].

LARSEN, DM .

PHYSICAL REVIEW B, 1973, 8 (02) :535-552

[10] OPTICAL TRANSITIONS BETWEEN EXCITED-STATES OF SHALLOW IMPURITIES IN GERMANIUM [J].

MURO, K ;

NISIDA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 34 (02) :563-563

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