SURFACE AND VOLUME DECAY PROCESSES IN SEMICONDUCTORS STUDIED BY CONTACTLESS TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS

被引：17

作者：

KUNST, M

MULLER, G

SCHMIDT, R

WETZEL, H

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 02期

关键词：

D O I：

10.1007/BF00615912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 85

页数：9

共 15 条

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[4]

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[7] THE STUDY OF CHARGE CARRIER KINETICS IN SEMICONDUCTORS BY MICROWAVE CONDUCTIVITY MEASUREMENTS .2. [J].

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[8]

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[9] ANALYSIS OF THE INTERACTION OF A LASER-PULSE WITH A SILICON-WAFER - DETERMINATION OF BULK LIFETIME AND SURFACE RECOMBINATION VELOCITY [J].

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[10]

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