BILAYER INTERFERENCE ENHANCED RAMAN-SPECTROSCOPY

被引：32

作者：

BACSA, WS

LANNIN, JS

机构：

[1] Department of Physics, Pennsylvania State University, University Park

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combination of the interference of incident and reflected coherent beams from a metal surface with a dielectric overlayer is calculated to yield an enhancement of the Raman signal of ultrathin adsorbed layers. The thickness of the dielectric layer is determined by optimizing the interference effect of the incident and reflected beams to enhance the electric field. In the case of SiO2/Al an interference enhancement factor of 27 is found. An experimental confirmation of this enhancement is obtained by comparing the in situ multichannel Raman signals of one monolayer C60 on an Al substrate and on a SiO2/Al bilayer. The use of the same bilayer substrate for a range of ultrathin films makes the metal-dielectric bilayer a versatile tool to investigate a number of nanoscale systems.

引用

页码：19 / 21

页数：3

共 10 条

[1] RAMAN INTENSITIES AND INTERFERENCE EFFECTS FOR THIN-FILMS ADSORBED ON METALS [J].