POTENTIAL DISTRIBUTION WITHIN SEMICONDUCTOR-DETECTORS USING COPLANAR ELECTRODES

被引:24
作者
HE, Z
机构
关键词
D O I
10.1016/0168-9002(95)00676-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The analytical form of the potential distribution within room-temperature of semiconductor detectors, which use periodic parallel strip electrodes, is presented. The results can be extended to account for the case of 2-D segmented electrode arrays. The induced charge on corresponding electrodes and implications of this analysis are discussed. This could help the design of detectors that have significant charge trapping problems, and to achieve good position sensitivity by making use of the trapping characteristics. Some calculated results have been compared with that obtained using finite element analysis by other groups and the consistency is demonstrated.
引用
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页码:572 / 575
页数:4
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