GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE

被引：96

作者：

WILLIAMS, RE

SHAW, DW

机构：

[1] U. S. Office of Naval Research, Arlington, Texas Instruments, Inc., Dallas

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of GaAs field-effect transistors were examined as a function of the channel doping profile in the direction perpendicular to the surface. Theoretical considerations predict that improved device linearity is expected for channel doping profiles with relatively low carrier concentrations near the surface. These predictions are experimentally confirmed by comparison of GaAs FET's fabricated with uniform (flat) and exponentionally varying (graded) carrier concentrations as a function of depth. In addition, the graded devices are observed to exhibit noise figures approximately 1 dB lower than those of uniformly doped devices of the same geometry. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：600 / 605

页数：6

共 9 条

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BENEKING H, 1975, EUROPEAN SOLID STATE

[2]

DALMAN GC, 1976, RADCTR245 CORN U ROM

[3] 2-LAYER MICROWAVE FET STRUCTURE FOR IMPROVED CHARACTERISTICS [J].