DEVICE MODEL FOR AN ION-IMPLANTED MESFET

被引：75

作者：

TAYLOR, GW ^{[1
]}

DARLEY, HM ^{[1
]}

FRYE, RC ^{[1
]}

CHATTERJEE, PK ^{[1
]}

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 03期

关键词：

D O I：

10.1109/T-ED.1979.19401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is developed for an ion-implanted MESFET device in terms of the range and straggle parameters of the Gaussian profile. Reasonable approximations are introduced to obtain a closed- form solution for the linear and triode regions of operation. Simpified square-law approximations are obtained under certain conditions and the validity of these forms is discussed. The simplified expressions are compared with those of the MOSFET and parallels are drawn. Data are presented to confirm the dc results of the theory over a wide range of implant parameters and demonstrate the value of the model for computer-aided design applications. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：172 / 182

页数：11

共 11 条

[1]

[Anonymous], IEEE T ELECT DEVICES

[2] FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES [J].