HIGH-FREQUENCY POWER GAIN OF JUNCTION TRANSISTORS

被引：24

作者：

PRITCHARD, RL

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1955年 / 43卷 / 09期

关键词：

D O I：

10.1109/JRPROC.1955.277882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1075 / 1085

页数：11

共 46 条

[1]

BROWN JS, 1948, P IRE, V36, P852

[2]

CHOW WF, 1953, P IRE, V41, P1126

[3]

COFFEY WT, COMMUNICATION

[4]

COFFEY WT, UNPUBLISHED

[5]

EARLY, 1953, BELL SYS TECH J, V32, P1286

[6] DESIGN THEORY OF JUNCTION TRANSISTORS [J].

EARLY, JM .

BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06) :1271-1312

[7]

EARLY JM, 1954, BELL SYSTEM TECHNICA, V33, P519

[8]

EARLY JM, 1952, P IRE, V40, P1403

[9]

GIACOLETTO LJ, 1954, RCA REV, V15, P555

[10]

GIACOLETTO LJ, 1954 IRE CONV REC 3, P102