MODULATED-IMPURITY-CONCENTRATION TRANSFERRED-ELECTRON DEVICES EXHIBITING LARGE HARMONIC FREQUENCY CONTENT

被引：7

作者：

JONES, SH

TAIT, GB

SHUR, M

机构：

[1] Applied Electrophysics Laboratory Electrical Engineering Department, University of Virginia, Charlottesville, Virginia

[2] Microwave Technology Branch, The Naval Research Laboratory, Washington, District of Columbia

[3] Applied Electrophysics Laboratory, Electrical Engineering Department, University of Virginia, Charlottesville, Virginia

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1992年 / 5卷 / 08期

关键词：

TRANSFERRED-ELECTRON DEVICES; MODULATED DEVICE DOPING PROFILE; HARMONIC GENERATION; MILLIMETER-WAVE DEVICES;

D O I：

10.1002/mop.4650050804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report large increases in the harmonic components of the oscillation current waveforms for InP and GaAs TEDs by appropriate modulation of the device doping profile. The results are based on accurate drift-diffusion simulations of Gunn-diode structures. An unoptimized InP modulated-impurity-concentration transferred-electron device demonstrated a 100% increase in second-harmonic power generation as compared with its companion TED.

引用

页码：354 / 358

页数：5

共 7 条

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[2]

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[3]

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[4]

Tait G.B., Krowne C.M., Determination of Transport Parameters for InP Device Simulation in ‘n'nn’ Structures, Solid‐State Electron., 30, 12, pp. 1317-1322, (1987)

[5]

Tait G.B., Krowne C.M., Large‐Signal Characterizations of Unipolar III‐V Semiconductor Diodes at Microwave and Millimeter‐Wave Frequencies, IEEE Transactions on Electron Devices, 35 ED, 2, (1988)

[6]

Solbach K., Simulation Study of Harmonic Oscillators, IEEE Trans. Microwave Theory Tech., 30 MTT, 8, (1982)

[7]

Friscourt M.R., Roland P.A., Cappy A., Constant E., Salmer G., Theoretical Contribution to the Design of Millimeter‐Wave TEO's, IEEE Transactions on Electron Devices, 30 ED, 3, (1983)

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