MEASUREMENTS OF LIFETIME IN GAAS DIODES

被引：10

作者：

TAKUSAGAWA, M

FUNAYAMA, T

NISHIZAWA, J

DEMIZU, K

NAKANO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 10期

关键词：

D O I：

10.1063/1.1709076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4084 / +

页数：1

相关论文

共 7 条

[1] ARIYOSHI H, 1965, SPR M I EL COMM ENGR, P1739
[2] CARRIER RECOMBINATION IN GALLIUM ARSENIDE
KINSEL, T
KUDMAN, I
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 797 - &
[3] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E )
KONNERTH, K
LANZA, C
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (07) : 120 - &
[4] DEGENERATE GERMANIUM .1. TUNNEL, EXCESS, AND THERMAL CURRENT IN TUNNEL DIODES
MEYERHOFER, D
BROWN, GA
SOMMERS, HS
[J]. PHYSICAL REVIEW, 1962, 126 (04): : 1329 - &
[5] DETERMINATION OF THE ACTIVE REGION IN LIGHT-EMITTING GAAS DIODES
MICHEL, AE
WALKER, EJ
NATHAN, MI
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) : 70 - 71
[6] NAKANO T, 1965, NAT CONVENTION RECOR, P488
[7] NISHIZAWA J, 1961, HANDOTAISOCHI, P57