EXPERIMENTAL EVIDENCE FOR INTERSTITIAL IN AND T1 IN ION-IMPLANTED SILICON

被引：16

作者：

DAVIES, JA

ERIKSSON, L

MAYER, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 08期

关键词：

D O I：

10.1063/1.1651980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：255 / &

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[1] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
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DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[2] A COMPARISON OF HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-3 AND -V ELEMENTS IN SI AND GE
MAYER, JW
DAVIES, JA
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[J]. APPLIED PHYSICS LETTERS, 1967, 11 (12) : 365 - &
[3] ANOMALOUS PROPERTIES OF SILICON RECRYSTALLIZED LAYERS CONTAINING INDIUM ATOMS
MIGITAKA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2139 - &
[4] EFFECT OF HEAVY DOPING ON DIFFUSION OF IMPURITIES IN SILICON
MILLEA, MF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (02) : 315 - &