OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES

被引：75

作者：

ALVES, ES ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

LEADBEATER, ML ^{[1
]}

SHEARD, FW ^{[1
]}

TOOMBS, GA ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 18期

关键词：

D O I：

10.1049/el:19880809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1190 / 1191

页数：2

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[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES
GOLDMAN, VJ
TSUI, DC
CUNNINGHAM, JE
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1256 - 1259
[2] SPACE-CHARGE BUILDUP AND BISTABILITY IN RESONANT-TUNNELING DOUBLE-BARRIER STRUCTURES
SHEARD, FW
TOOMBS, GA
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1228 - 1230
[3] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT
SOLLNER, TCLG
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1622 - 1622
[4] TOOMBS GA, 1988, I PHYS C SER, V91, P581
[5] TOOMBS GA, 1987, 14TH P INT S GALL AR