INTERSUBBAND ABSORPTION CHANGES IN GAAS ALGAAS MQW INDUCED BY EXTERNAL LIGHT

被引：1

作者：

TSUCHIYA, H

SHAKUDA, Y

KATAHAMA, H

机构：

[1] ATR Optical, Radio Communications Research Laboratories, Soraku-gun, Kyoto, 619-02, Sanpeidani, Inuidani, Seika-cho

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90284-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the first observation of the intersubband absorption changes in a doped GaAs/AlGaAs multi quantum well induced by CW Ar-ion laser excitation. A sample consisting of 52 Å GaAs quantum wells separated by 150 Å AlGaAs barriers shows an optical absorption peak at 161.4 meV. With an incidence of the Ar-ion laser, the absorption peak shifts towards lower energy and the integrated absorbance decreases. The contribution of the sample temperature to the changes is examined and the possible effects of band nonparabolicity and band-bending are also considered. © 1990.

引用

页码：172 / 175

页数：4

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