SILICON P-N-JUNCTION PHOTO-DIODES SENSITIVE TO ULTRAVIOLET-RADIATION

被引:28
作者
OUCHI, H
MUKAI, T
KAMEI, T
OKAMURA, M
机构
[1] Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki
关键词
D O I
10.1109/T-ED.1979.19803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experimental studies on a silicon photodiode have been carried out to achieve the performance characteristics required for applications such as spectroscopic measurements. Sheet resistance was applied as a control parameter for diffusion to obtain a shallow junction less than 1 μm in depth. For high ultraviolet responsivity, the diffusion layer, in which a built-in field is induced by the impurity gradient, was optimized for values of the sheet resistance of about 800-2000 O/μ. The device responded in the wavelength range of 200-1000 nm,and had a responsivity of 0.065 A/W at 200 nm. In order to reduce influence of stray light in spectroscopic measurements, two types of photodiodes were fabricated with photoresponse reduced in the long-wavelength portion. A p+-n-p+ device was found preferable to a p+-n-n+ device. And the device structure with an extended electrode was desirable for high, reliable performance. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
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页码:1965 / 1969
页数:5
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