CHARACTERISTICS OF SEMICONDUCTING GLASS SWITCHING/MEMORY DIODES

被引：30

作者：

PEARSON, AD

机构：

[1] Murray Hill, Murray Hill, NJ

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0510

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Experimental studies of three conducting states exhibited by semiconducting glass diodes, and memory function they display when appropriately pulsed; laboratory operation of simple diodes and methods of inducing transitions among %various states; possible role of phase changes in mechanism of device operation; new evidence in support of filamentary conduction hypothesis.

引用

页码：510 / &

共 8 条

[1] Dewald J.F., 1962, J ELECT CHEM SOC, V109, p243c
[2] DEWALD JF, 1962, MAY EL SOC M LOS ANG
[3] ELECTRICAL CONDUCTION ANOMALY OF SEMICONDUCTING GLASSES IN THE SYSTEM AS-TE-I
EATON, DL
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (11) : 554 - 558
[4] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[5] FILAMENTARY CONDUCTION IN SEMICONDUCTING GLASS DIODES
PEARSON, AD
MILLER, CE
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 280 - &
[6] THE HALL EFFECT-SEEBECK EFFECT SIGN ANOMALY IN SEMICONDUCTING GLASSES
PEARSON, AD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 753 - 755
[7] PEARSON AD, 1963, ADVANCES GLASS TEC 2, P145
[8] PEARSON AD, 1962, ADVANCES GLASS TECHN, P357

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