ION-IMPLANTATION INTO DIAMOND

被引：46

作者：

VAVILOV, VS

机构：

[1] P.N. Lebedev Inst. Phys., Acad. Sci., USSR, Moscow, Russia

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 37卷 / 3-4期

关键词：

IONS;

D O I：

10.1080/00337577808233194

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Contemporary data on the band structure, transport phenomena and other electronic and optical processes in insulating and semi-conducting diamond stimulate the research directed towards controlling the properties of this material, attractive as it is in many respects. The data on the possibilities of controlling of the properties of diamond by ion implantation are presented and analyzed.

引用

页码：229 / 236

页数：8

共 38 条

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COLLINS, AT
WILLIAMS, AW
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13): : 1789 - &
[10] USE OF CHARACTERISTIC XRAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND
DAVIDSON, LA
GIBBONS, JF
DER, RC
KAVANAGH, TM
KHAN, JM
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 295 - &

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