IMPEDANCE MATCHING FOR ENHANCED WAVEGUIDE PHOTODETECTOR INTEGRATION

被引：27

作者：

DERI, RJ ^{[1
]}

WADA, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2712 / 2714

页数：3

共 12 条

[1]

AMANN MC, 1987, ELECTRON LETT, V23, P896

[2]

BORNHOLDT C, 1987, ELECTRON LETT, V23, P4

[3] A NOVEL INTEGRATED-OPTICS WAVELENGTH FILTER IN INGAASP-INP [J].

BROBERG, B ;

LINDGREN, BS ;

OBERG, MG ;

JIANG, H .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (02) :196-203

[4]

CHAN WK, 1988, 1988 INT EL DEV M SA, P475

[5] MONOLITHIC INTEGRATED WAVE-GUIDE PHOTODETECTOR [J].

CHANDRASEKHAR, S ;

CAMPBELL, JC ;

DENTAI, AG ;

QUA, GJ .

ELECTRONICS LETTERS, 1987, 23 (10) :501-502

[6] MONOLITHIC INTEGRATED INGAALAS INP RIDGE WAVE-GUIDE PHOTODIODES FOR 1.55-MU-M OPERATION GROWN BY MOLECULAR-BEAM EPITAXY [J].

CINGUINO, P ;

GENOVA, F ;

RIGO, C ;

CACCIATORE, C ;

STANO, A .

APPLIED PHYSICS LETTERS, 1987, 50 (21) :1515-1517

[7] MONOLITHIC INTEGRATION OF A GAINAS P-I-N PHOTODIODE AND AN OPTICAL WAVE-GUIDE - MODELING AND REALIZATION USING CHLORIDE VAPOR-PHASE EPITAXY [J].

ERMAN, M ;

JARRY, P ;

GAMONAL, R ;

GENTNER, JL ;

STEPHAN, P ;

GUEDON, C .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (03) :399-412

[8]

HEAVENS OS, 1960, OPTICAL PROPERTIES T

[9]

HUNSPERGER RG, 1983, INTEGRATED OPTICS TH

[10]

KURAMATA A, 1989, I PHYS C SER, V96, P113

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