THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODES

被引：7

作者：

WU, CY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.329025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2909 / 2912

页数：4

相关论文

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