SURFACE-ANALYSIS OF NICKEL-OXIDE FILMS MODIFIED BY A REACTIVE ELEMENT

The surface morphology of oxide grown in the temperature range of 873-1173 K on modified high-purity nickel has been observed and quantitatively analyzed by atomic-force microscopy. The modifications included one of two finishing techniques and either CeO2 sol-gel coatings or Ce-ion implantation. There is an essential difference in the surface morphology and grain size for oxides formed on Ce/CeO2-modified nickel in comparison to pure NiO. The oxide topography also depends on the substrate-surface-finishing technique and the method of applying the cerium. Both Auger electron spectroscopy and Rutherford backscattering spectrometry were used to evaluate the depth composition of the oxide. In the modified oxide formed on chemically polished substrates the Ce generally appeared to be located close to the outer surface, even after long oxidation times. In oxide grown on mechanically polished substrates Ce was detectable by these techniques only during the very early stages of oxidation. A general correlation exists between the parameters describing the oxide-surface morphology and the Ce-depth distribution, and the reduction of the NiO growth rate achieved by applying the reactive element. Detailed analysis of the oxide surface, internal microstructure, and chemistry gives new insights into the problem of the characterization of thin oxide films and the mechanism of oxide formation.