High frequency dielectric properties of thin-film PZT capacitors

被引:12
作者
Williamson, W
Gilbert, BK
Chen, HD
Udayakumar, KR
Cross, LE
Bozler, CM
机构
[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
[2] MIT,LINCOLN LAB,HIGH SPEED MICROELECTR GRP,LEXINGTON,MA 02173
关键词
D O I
10.1080/10584589508012291
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a method for calculating the dielectric constant and the dissipation factor for thin-film ferroelectric capacitors from scattering parameter measurements at multi-gigahertz frequencies. Physical measurement is discussed along with description of the model upon which the calculation is based. Experimental results for 0.5 micron films of PZT are reported up to 15 GHz. Direct measurement is compared with indirectly calculated values at the 100 MHz to 1.5 GHz range, showing excellent agreement.
引用
收藏
页码:335 / 342
页数:8
相关论文
共 9 条
[1]  
DIMOS D, 1995, IEEE T COMPONENTS PA, V18
[2]  
GARINO T, 1994, 1994 P INT S MICR, P179
[3]  
Gilbert B. K., 1992, International Journal of Microcircuits and Electronic Packaging, V15, P171
[4]   CHEMICAL ETCHING OF THIN-FILM PLZT [J].
MANCHA, S .
FERROELECTRICS, 1992, 135 (1-4) :131-137
[5]  
POZAR DM, 1990, MICROWAVE ENG, P231
[6]  
RANDALL B, 1993, 1993 P INT EL PACK C, V1, P615
[7]   PREPARATION AND ELECTRICAL-PROPERTIES OF LANTHANUM-DOPED LEAD TITANATE THIN-FILMS BY SOL-GEL PROCESSING [J].
SHIMIZU, Y ;
UDAYAKUMAR, KR ;
CROSS, LE .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (12) :3023-3027
[8]  
UDAYAKUMAR KR, 1995, J APPL PHYS, V77
[9]  
UDAYAKUMAR KR, 1990, 7TH P INT S APPL FER, P741