TRACER INVESTIGATION OF HYDROXYLS IN SIO2 FILMS ON SILICON

被引：29

作者：

SCHMIDT, PF

ASHNER, JD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 02期

关键词：

D O I：

10.1149/1.2408039

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：325 / &

共 24 条

[1] MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION [J].

DAVIES, JA ;

DOMEIJ, B ;

PRINGLE, JPS ;

BROWN, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :675-&

[2] A-C PROPERTIES OF ANODIC OXIDE FILMS ON SILICON [J].

DREINER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) :1210-+

[3]

DROBEK J, PRIVATE COMMUNICATIO

[4]

DRUM CM, TO BE PUBLISHED

[5] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE [J].

DUFFEK, EF ;

MYLROIE, C ;

BENJAMINI, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) :1042-1046

[6] ELECTRON BOMBARDMENT INDUCED CONDUCTIVITY IN FUSED SILICA [J].

EHRENBERG, W ;

GUTAN, VB ;

VODOPYANOV, LK .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (01) :63-+

[7]

ERNSBERGER FM, 1959, J PHYS CHEM SOLIDS, V13, P347

[8]

EVANS EA, 1966, TRITIUM COMPOUNDS, pCH5

[9]

FISHER CJ, 1951, J APPL PHYS, V22, P74

[10]

FRITZSCHE C, 1967, Z ANGEW PHYSIK, V24, P48

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