OPTICAL PROPERTIES AND ENERGY-GAP OF GETE FROM REFLECTANCE STUDIES

被引：64

作者：

LEWIS, JE ^{[1
]}

机构：

[1] SUNY, DEPT PHYS, PLATTSBURGH, NY 12901 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1973年 / 59卷 / 01期

关键词：

D O I：

10.1002/pssb.2220590138

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：367 / 377

页数：11

共 23 条

[1] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .3. ELECTRICAL PROPERTIES AND BAND STRUCTURE [J].

BAHL, SK ;

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2196-&

[2] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .2. OPTICAL PROPERTIES [J].

BAHL, SK ;

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4940-&

[3] ELECTRIC-SUSCEPTIBILITY MASS OF FREE HOLES IN SNTE [J].

BIS, RF ;

DIXON, JR .

PHYSICAL REVIEW B, 1970, 2 (04) :1004-&

[4] CONDUCTION MECHANISM OF HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .2. INFLUENCE OF CHARGED DEFECTS [J].

BOER, KW .

PHYSICA STATUS SOLIDI, 1969, 34 (02) :733-&

[5] ELECTRONIC DIELECTRIC CONSTANT OF AMORPHOUS SEMICONDUCTORS [J].

BRODSKY, MH ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1970, 25 (12) :798-&

[6] OPTICAL PROPERTIES + BAND STRUCTURE OF GROUP 4-6 + GROUP 5 MATERIALS [J].

CARDONA, M ;

GREENAWAY, DL .

PHYSICAL REVIEW, 1964, 133 (6A) :1685-+

[7] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .I. GROWTH AND STRUCTURAL BEHAVIOR [J].

CHOPRA, KL ;

BAHL, SK .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4171-&

[8] ELECTRIC-SUSCEPTIBILITY HOLE MASS OF LEAD TELLURIDE [J].

DIXON, JR ;

RIEDL, HR .

PHYSICAL REVIEW, 1965, 138 (3A) :A873-&

[9] SHORT-RANGE ORDER IN AMORPHOUS GETE FILMS [J].

DOVE, DB ;

HERITAGE, MB ;

CHOPRA, KL ;

BAHL, SK .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :138-&

[10]

HOUGHTON JT, 1966, INFRA RED PHYSICS

← 1 2 3 →