METHOD FOR CROSS-SECTIONAL EXAMINATION OF MOLECULAR SEMICONDUCTOR-METAL FILM JUNCTIONS USING TRANSMISSION ELECTRON-MICROSCOPY

被引：6

作者：

KATZ, W ^{[1
]}

EVANS, CA ^{[1
]}

EATON, DR ^{[1
]}

FAULKNER, LR ^{[1
]}

机构：

[1] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1561 / 1564

页数：4

共 20 条

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[8] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 120 - 122
[9] FEDEROV MI, 1971, SOV PHYS SEMICOND, V4, P1720
[10] GHOSH AK, 1974, J APPL PHYS, V45, P230, DOI 10.1063/1.1662965