OPTICAL-DETECTION OF RESONANT TUNNELING OF ELECTRONS IN QUANTUM-WELLS

被引：23

作者：

LIVESCU, G

FOX, AM

MILLER, DAB

SIZER, T

KNOX, WH

CUNNINGHAM, JE

GOSSARD, AC

ENGLISH, JH

机构：

[1] AT and T Bell Labs., Holmdel, NJ

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Clear evidence for resonant tunnelling of electrons in a p-i-n quantum well modulator is provided by picosecond pump-and-probe electro-absorption measurements. The temperature-independent escape times show a drastic reduction when an electrical field is applied perpendicular to the wells, with a pronounced minimum at the field corresponding to the resonance between the n=1 electron level in one quantum well, and the n=2 electron level in the adjacent one. The authors' calculated field dependence of the electron tunnelling times proves that this behaviour is the signature of resonant tunnelling.

引用

页码：549 / 556

页数：8

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