THERMALLY INDUCED OPTICAL BISTABILITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

KUDLEK, G ^{[1
]}

HOLLANDT, J ^{[1
]}

PRESSER, N ^{[1
]}

GUTOWSKI, J ^{[1
]}

DURBIN, SM ^{[1
]}

MENKE, DR ^{[1
]}

KOBAYASHI, M ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

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页码：2532 / 2534

页数：3

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