ELECTRICAL AND THERMAL-PROPERTIES OF GE40S60 FILMS

被引：9

作者：

FADEL, M

NEGEM, A

METWALLY, H

AFIFI, MA

机构：

[1] Physics Department, Faculty of Education, Ain Shams University, Cairo

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 03期

关键词：

D O I：

10.1007/BF00323852

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Films of the composition Ge40S60 have been studied in the temperature range of 313-423 K for electrical conductivity, and 293-373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d = 0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.

引用

页码：288 / 292

页数：5

共 18 条

[1] THRESHOLD SWITCHING EFFECTS IN AGTLSE2 AND CUTLSE2 FILMS [J].

AFIFI, MA ;

LABIB, HHA ;

ABOUELELA, AH ;

SHARAF, KA .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (02) :113-117

[2]

AFIFI MA, 1985, EGYPT J PHYS, V16, P117

[3]

Alder David, 1972, J NON-CRYST SOLIDS, V8-10, P538

[4]

BECH A, 1957, J SCI INSTRUM, V34, P186

[5] EVIDENCE FOR CRITICAL-FIELD SWITCHING IN AMORPHOUS-SEMICONDUCTOR MATERIALS [J].

BUCKLEY, WD ;

HOLMBERG, SH .

PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1429-1432

[6] ELECTRICAL-CONDUCTION OF AS2SE3 GLASS AT HIGH FIELDS [J].

DEWIT, HJ ;

CREVECOEUR, C .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :729-+

[7]

GLASSBRENNER GJ, 1964, PHYS REV, V134, P1058

[8] HARDNESS AND THERMAL-CONDUCTIVITY OF AS-SE-TE CHALCOGENIDE GLASSES [J].

KOTKATA, MF ;

ELDEN, MB .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :931-934

[9]

KOTKATA MF, 1975, 14TH P INT C THERM C, P39

[10] STRUCTURAL INTERPRETATION OF INFRARED AND RAMAN-SPECTRA OF GLASSES IN ALLOY SYSTEM GE1-XSX [J].

LUCOVSKY, G ;

GALEENER, FL ;

KEEZER, RC ;

GEILS, RH ;

SIX, HA .

PHYSICAL REVIEW B, 1974, 10 (12) :5134-5146

← 1 2 →