QUANTUM-WELL INTERSUB-BAND ELECTROLUMINESCENT DIODE AT LAMBDA=5-MU-M

被引：16

作者：

FAIST, J

CAPASSO, F

SIRTORI, C

SIVCO, DL

HUTCHINSON, AL

CHU, SNG

CHO, AY

机构：

[1] AT&T Bell Laboratories

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 25期

关键词：

ELECTROLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; LIGHT-EMITTING DIODES;

D O I：

10.1049/el:19931497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first observation of mid-infra-red electroluminescence associated with an intersub-band transition in a unipolar quantum well diode with graded-pp injector. Power levels in the nanowatt range have been measured up to roomtemperature.

引用

页码：2230 / 2231

页数：2

共 4 条

[1] MEASUREMENT OF THE INTERSUBBAND SCATTERING RATE IN SEMICONDUCTOR QUANTUM-WELLS BY EXCITED-STATE DIFFERENTIAL ABSORPTION-SPECTROSCOPY
FAIST, J
CAPASSO, F
SIRTORI, C
SIVCO, DL
HUTCHINSON, AL
CHU, SNG
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1354 - 1356
[2] FAIST J, IN PRESS SOLID STATE
[3] INTERSUBBAND EMISSION FROM SEMICONDUCTOR SUPERLATTICES EXCITED BY SEQUENTIAL RESONANT TUNNELING
HELM, M
ENGLAND, P
COLAS, E
DEROSA, F
ALLEN, SJ
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (01) : 74 - 77
[4] Kazarinov R. F., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P797

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