METAL-INSULATOR PHENOMENA IN 3D TRANSITION-METAL OXIDES

被引：18

作者：

TOKURA, Y ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICA C | 1994年 / 235卷

关键词：

D O I：

10.1016/0921-4534(94)91332-3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Barely metallic states with novel electronic structures and properties can be realized by control of the band filling in 3d transition metal oxide compounds with strong electron correlation. Recent experimental investigations on the (doping-induced) Mott transition in perovskite Ti oxides are reviewed in comparison with the MI transition in the HTSC Cu oxides. A variety of anomalous metal states near the Mott transition and their possible application as new electronic materials are argued taking an example of the filling-controlled Mn oxide compounds.

引用

页码：138 / 141

页数：4

共 13 条

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