MWPACVD DIAMOND HOMOEPITAXIAL GROWTH - ROLE OF THE PLASMA AND THE SUBSTRATE PARAMETERS

被引：18

作者：

FINDELINGDUFOUR, C

VIGNES, A

GICQUEL, A

机构：

[1] Laboratoire d'Ingéniérie des Matériaux et des Hautes Pressions, CNRS, Université Paris Nord, 93430 Villetaneuse, Avenue J. B. Clément

来源：

关键词：

DIAMOND; CVD MICROWAVE; HOMOEPITAXY; GROWTH MORPHOLOGY;

D O I：

10.1016/0925-9635(94)05316-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homoepitaxial diamond layers were grown in a microwave plasma-assisted chemical vapour deposition (MWPACVD) reactor on {100} and {110} diamond single crystals. The effects of the operating conditions and of the substrate misorientation from a low index plane on the quality of the epi layers and on the growth rates are presented. Optical and scanning electron microscopy demonstrated that, for the {100} substrates, the morphology of the layers strongly depends on the substrate temperature and on the microwave power density. For the {110} substrates, the morphology depends on the methane percentage and on the rate of cooling after deposition. Raman spectroscopy shows, for the {100} substrates, an absence in the epi layers of non-diamond phases, and for the {110} substrates the presence of non-diamond phases depends on the methane percentage.

引用

页码：429 / 434

页数：6

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