DIFFUSION OF ZINC IN GALLIUM ARSENIDE UNDER EXCESS ARSENIC PRESSURE

被引:43
作者
SHIH, KK
ALLEN, JW
PEARSON, GL
机构
关键词
D O I
10.1016/0022-3697(68)90083-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:379 / +
页数:1
相关论文
共 16 条
[1]   THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J].
ALLEN, JW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :134-&
[2]  
Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[3]  
BOLTAKS BI, 1964, SOV PHYS-SOL STATE, V6, P1181
[4]   DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].
CHANG, LL ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&
[5]   DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].
CUNNELL, FA ;
GOOCH, CH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133
[6]   EFFECT OF ARSENIC PRESSURE ON SOLUBILITY OF COPPER IN GAAS [J].
FURUKAWA, Y ;
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) :1535-&
[7]  
GOLDSTEIN B, 1960, PHYS REV, V118, P1025
[8]  
KENDALL DC, UNPUBLISHED
[9]   RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].
LONGINI, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130
[10]   GALLIUM-ARSENIC-ZINC SYSTEM [J].
PANISH, MB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (02) :291-&