LASER PHOTOETCHING OF DOPED POLY(TETRAFLUOROETHYLENE), SUBSTITUTED-PTFE, AND POLYIMIDE FILMS

被引：4

作者：

HIRAOKA, H

LAZARC, S

CHUANG, TJ

RETTNER, CT

HUNZIKER, HE

机构：

[1] Universite de Bordeaux 1, Laboratoire de Photophysique et Photochimie Moleculare, CNRS No 438

[2] IBM Almaden Research Center, San Jose, CA 95120-6099

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90126-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both poly(tetrafluoroethylene) and polyimides are important materials in microelectronic industry for packaging and other applications, and the fabrication of images in these materials is desirable. Doped Teflon and functionally substituted Teflon (Nafion) films were photo-ablated using excimer and Nd:YAG lasers, and their photochemistry was studied. Although photoablation of polyimide with the XeCl excimer laser has been used in manufacturing, it is not known that dyed polyimide can be photoablated readily at 532 nm with the 2nd harmonic of a Nd:YAG laser, as reported here.

引用

页码：429 / 432

页数：4